Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.Comment: 5 pages, 3 figures, title change

Periodicity-dependence of the ferroelectric properties in BiFeO3/SrTiO3 multiferroic superlattices

Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on increase of periodicity compared to single layer BiFeO3 thin films. Reduced leakage and intrinsic polarization hysteresis was observed and was confirmed by PUND analysis for periodicities in the range 20-60A. The leakage current was observed to be dominated by space charge limited conductionComment: Submitted to Applied Physics Letter

Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here we report the study of the resistive switching characteristics of a of hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La0.7Sr0.3MnO3 (LSMO) and SrRuO3 (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects

Charge Carrier Transport in Metal Phthalocyanine Based Disordered Thin Films

The charge carrier transport in metal phthallocyanine based disordered thin films has been investigated. Charge carrier mobility in these disordered thin films strongly depends on the electric field and temperature due to hopping conduction. The applicability of two different Gaussian disorder models has been compared and evaluated for charge carrier transport using simple experimental results and based on our extensive analysis, it has been found that spatial and energetic correlation is important in explaining the electrical transport in these organic semiconductors

Multicentric carcinoma: a report of four cases and some gynaecological and surgical aspects

No Abstrac

An Analytic Solution of Hydrodynamic Equations with Source Terms in Heavy Ion Collisions

The energy and baryon densities in heavy ion collisions are estimated by analytically solving a 1+1 dimensional hydrodynamical model with source terms. Particularly, a competition between the energy and baryon sources and the expansion of the system is discussed in detail.Comment: LaTeX2e, 7 pages, 4 postscript figures, submitted to Int. J. Mod. Phys.

Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor

Copyright 2010 by the American Physical Society. Article is available at

Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.Comment: 6 pages, 2 figures; to be published in Journal of Applied Physic